This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low−voltage, high−frequency inverters, free wheeling diodes, and polarity protection diodes.
Manufacturing Part No: 1N5818
- Extremely Low VF.
- Low Stored Charge, Majority Carrier Conduction.
- Low Power Loss/High Efficiency.