Description
N-channel 40V/120A TO220 Power MOSFET.
This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Brief Data:
- Drain-source Voltage: 40V.
- Gate-source Voltage: ±20V.
- Drain-current (continuous): 120A.
- RDS(on): 4.3mΩ.
Related information: