2N7002 N-channel MOSFET 60V/0.3mA


2N7002 N-channel MOSFET 60V/0.3mA in SOT23 package.

Pack of 20-pieces/pack.

Image is for package illustration purpose only. Refer to product specs for detail.


Out of stock

SKU: ADS1039 Category:


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.

Brief Data:

  • Channel Type: N.
  • Maximum Continuous Drain Current ID: 300mA.
  • Maximum Drain Source Voltage: 60V.
  • Maximum Drain Source Resistance: 13.5Ω.
  • Maximum Gate Threshold Voltage: 2.5V.
  • Maximum Gate Source Voltage: ±20V.
  • Package Type: SOT-23.
  • Mounting Type: SMD.
  • Transistor Configuration: Single.
  • Pin Count: 3.

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Additional information

Weight 0.05 kg

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