Description
Silicon N-Channel Junction FET in TO-92 package. 55V/30mA.
For low-frequency amplification and switching.
Brief Data:
- Low noise, high gain.
- High gate to drain voltage VGDO.
- Package: TO92 Thru Hole.
- Drain to Source voltage: 55V.
- Drain current: 30mA.
- Gate current ID: 10mA.
- Allowable power dissipation: 250mW
Related Information:
Our Local Outlet: