Description
N-Channel Power MOSFET. 30V/11A/15mΩ. SO8 package.
The AO4422 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.
Brief Data:
- Drain-Source Voltage VDS: 30V.
- Continuous Drain Current ID (at VGS=10V): 11A.
- RDS(ON) (at VGS=10V): <15mΩ.
- RDS(ON) (at VGS = 4.5V): <24mΩ.
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