Description
N-Channel Standard Level Power MOSFET.
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
Brief Data:
- Drain-source voltage VDS: 55V.
- Drain current ID: 75A.
- Drain-source on-state resistance: 6mΩ.
- Total power dissipation: 254W.
- Package: TO220.
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