Description
N-Channel Power MOSFET/ 200V 9.5A
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.
Brief Data:
- Drain-Source Breakdown Voltage Vds: 200V.
- Continuous Drain Current ID: 9.5A.
- Drain-Source Resistance Rds On: 400mOhms.
- Gate-Source Voltage Vgs: 20V.
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