Description
N-Channel Power MOSFET. 60V/20A/60mΩ/15nC. D2PAK package.
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
Brief Data:
- Vds-Drain-Source Breakdown Voltage: 60V.
- Id-Continuous Drain Current: 20A.
- Rds On – Drain-Source Resistance: 60mOhms.
- Vgs-Gate-Source Voltage: 25V.
