Description
IRFP4468PBF N-Channel MOSFET 100V 195A.
The IRFP4468PBF is a 100V single N-channel HEXFET® Power MOSFET with extremely low on-resistance per silicon area and fast switching performance using Trench MOSFET technology. Suitable for high efficiency synchronous rectification in SMPS, uninterruptible power supply, high speed power switching, hard switched and high frequency circuits.
Brief Data:
- Channel Type: N.
- Continuous Drain Current: 195A.
- Drain Source Voltage: 100V.
- Drain Source Resistance: 3mΩ.
- Gate Threshold Voltage: 4V.
- Gate Source Voltage: ±20V.
- Package Type: TO-247AC.
- Mounting Type: Through Hole.
- Power Dissipation: 520W.
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