Description
Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT262A2 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors.
Brief Data:
- High power gain.
- Drain-Source voltage Vds: 65V.
- DC drain current ID: 15A.
- Good thermal stability
- Gold metallization ensures
- excellent reliability
- Designed for broadband operation
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