IRF740 10A/400V N-Channel Power MOSFET


IRF740 10A/400V N-Channel Power MOSFET.

Pack of 1-piece/lot.

Image is for package illustration purpose only. Refer to product specs for detail.

In stock

SKU: ADS-1401 Categories: ,


This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Brief Data:

  • Channel Type: N.
  • Continuous Drain Current: 10A.
  • Drain Source Voltage: 400V.
  • Drain Source Resistance: 0.55Ω.
  • Gate Threshold Voltage: 4V.
  • Gate Source Voltage: ±20V.
  • Package Type: TO-220.
  • Mounting Type: Through Hole.
  • Power Dissipation: 125W.

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Additional information

Weight 0.05 kg

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