Description
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
Brief Data:
- Channel Type: N.
- Continuous Drain Current: 10A.
- Drain Source Voltage: 400V.
- Drain Source Resistance: 0.55Ω.
- Gate Threshold Voltage: 4V.
- Gate Source Voltage: ±20V.
- Package Type: TO-220.
- Mounting Type: Through Hole.
- Power Dissipation: 125W.
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