Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The device is designed for use in lighting applications.
Brief Data:
- Transistor Polarity: NPN.
- Configuration: Single.
- Collector- Emitter Voltage VCEO Max: 400V.
- Emitter- Base Voltage VEBO: 9V.
- Collector-Emitter Saturation Voltage: 1.2V.
- Maximum DC Collector Current: 2A.
- Continuous Collector Current: 1A.
- Mounting Style:Thru Hole.
- Package/Case: SOT-32-3
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